Electron-hole pair generation in SiC high-temperature alpha particle detectors

MEASUREMENTS OF THE AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWprEEN 5-32O0K(

The average energy exDended to create an electron-hole pair in silicon ESi(T) has been measured in the 5-3200K temperature range with thin totally depleted surface barrier and diffused junction radiation detectors. The data have been normalized to a value of ESi (3000K) = 3.62 eV. A dependence of ESi on T much weaker than previously published by other authors has been observed. In the examined ...

Extremely efficient multiple electron-hole pair generation in carbon nanotube photodiodes.

We observed highly efficient generation of electron-hole pairs due to impact excitation in single-walled carbon nanotube p-n junction photodiodes. Optical excitation into the second electronic subband E22 leads to striking photocurrent steps in the device I-V(SD) characteristics that occur at voltage intervals of the band-gap energy E(GAP)/e. Spatially and spectrally resolved photocurrent combi...

Generation in Carbon Nanotube Photodiodes Extremely Efficient Multiple Electron - Hole Pair

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Gabor , Generation in Carbon Nanotube Photodiodes Extremely Efficient Multiple Electron - Hole Pair

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Experimental Determination of Electron-Hole Pair Creation Energy in 4H-SiC Epitaxial Layer: An Absolute Calibration Approach